High Power RF Flange Resistor 1200W with Ceramic Composition and Wide Operating Temperature Range -55°C to +165°C

Lieu d'origine	Sichuan, Chine
Nom de marque	BONENS
Numéro de modèle	RIG

Détails de produit

Spécification:

800w~1200w

Type d'emballage:

En boîte

Package / étui:

Sac en plastique

Description:

Bornes résistance rf 10ohm 50ohm

Résistance:

1 ~ 500 Ω, 1 ~ 500 Ω

Tolérance à la résistance:

± 5%

Nom de l'article:

RIG Résistances haute puissance Résistance RF 1000 watts 50 ohm 100 ohm

Technologie:

Composition céramique

Type de package:

Type de package

Coefficient de température:

±300*10-6/°C

Température de fonctionnement:

-55°C à +165°C

Puissance (watts):

1W-1200W

Puissance nominale:

1~1200W

Mettre en évidence:

High Power RF Chip Resistor

Flange RF Resistor 1000w

RF Resistor with 50ohm Terminals

Conditions de paiement et d'expédition

Quantité de commande min

100

Description de produit

Product Description

100W 150W 200W 250W 400W 800W 1000W 500W high power Terminals 10ohm 50ohm rf resistor picture

100W 150W 200W 250W 400W 800W 1000W 500W high power Terminals 10ohm 50ohm rf resistor drawing

All RF flange resistor can do with one terminal or Two terminals

100W one terminal resistor drawing

150W two terminals rf resistor drawing

250W 10ohm 50ohm two terminals rf resistor drawing

400W 10ohm 50ohm two terminals rf resistor drawing

500W 10ohm 50ohm one terminals rf resistor drawing

600w 10ohm 50ohm one terminals rf resistor drawing

800W 10ohm 50ohm two terminals rf resistor drawing

1000W 10ohm 50ohm One terminals rf resistor drawing

Specification

100W 150W 200W 250W 400W 800W 1000W 500W high power Terminals 10ohm 50ohm rf resistor Parameters

Electrical Characteristics
Range of nominal resistance	1 ~500Ω
Range of nominal resistance	±5%
Frequency range	0~2GHz
Standing wave ratio	1.2~1.3
Insulation resistance	≥ 1GΩ
Withstand voltage	500V/1 mm (Substrate thickness)
Environment Characteristics
Rated power	1~1200W (70°C)
Temperature range	-55°C~+165°C
TCR	±300×10-6/°C
Temperature shock (-55°C/+125°C, 3 times)	ΔR≤±5%R
Moisture proof (GJB306A-96-Method106)	ΔR≤±5%R
Vibration (10-500HZ, 0.75mm, 6h)	ΔR≤±3%R, No mechanical damage
Test at low temperature (-55°C, 24h)	ΔR≤±5%R
Load life (96)	ΔR≤±5%
Collision	ΔR≤±3%R
Physical Characteristics
Terminal strength(10N,5S)	No loose and fall off
Solderability(240℃,3s)	Tin layer covering area of 95%